Growth of GaAs and AIGaAs epitaxial layers on both (111)A and (111)B faces ofGaAs substrates was studied by the atmospheric metalorganic vapor phase epitaxy (MOVPE) technique. We show that GaAs and A1GaAs layers with excellent surface quality can be grown at relatively low temperatures and V/Ill rat
β¦ LIBER β¦
As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy
β Scribed by Moret, N.; Oberli, D. Y.; Pelucchi, E.; Gogneau, N.; Rudra, A.; Kapon, E.
- Book ID
- 118180647
- Publisher
- The American Physical Society
- Year
- 2011
- Tongue
- English
- Weight
- 859 KB
- Volume
- 84
- Category
- Article
- ISSN
- 1098-0121
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