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Interfaces of InAsP/InP multiple quantum wells grown by metalorganic vapor phase epitaxy

โœ Scribed by C. A. Tran; J. T. Graham; J. L. Brebner; R. A. Masut


Book ID
112811648
Publisher
Springer US
Year
1994
Tongue
English
Weight
587 KB
Volume
23
Category
Article
ISSN
0361-5235

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GaInAs/InP quantum wires grown by metalo
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A single nominally lattice matched GalnAs quantum well (QW)/quantum wire (QWR) structure was grown by metalorganic vapor phase epitaxy (MOVPE) in Vgrooved lnP substrates. Different SiO2 etch masks with opening widths from 2/tin down to 200 nm (for application as second order DFB grating) were define