✦ LIBER ✦

Characteristics of GaAsNâGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

✍ Scribed by Khandekar, A. A.; Hawkins, B. E.; Kuech, T. F.; Yeh, J. Y.; Mawst, L. J.; Meyer, J. R.; Vurgaftman, I.; Tansu, N.

Book ID: 120827422
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 440 KB
Volume: 98
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2148620

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

As quantum wells grown on vicinal substr

As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy

✍ Moret, N.; Oberli, D. Y.; Pelucchi, E.; Gogneau, N.; Rudra, A.; Kapon, E. 📂 Article 📅 2011 🏛 The American Physical Society 🌐 English ⚖ 859 KB

High quality GaAs/AlGaAs quantum wells g

High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy

✍ E. Mayo; S.A. Dickey; A. Majerfeld; A. Sanz-Hervás; B.W. Kim 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 468 KB

Growth of GaAs and AIGaAs epitaxial layers on both (111)A and (111)B faces ofGaAs substrates was studied by the atmospheric metalorganic vapor phase epitaxy (MOVPE) technique. We show that GaAs and A1GaAs layers with excellent surface quality can be grown at relatively low temperatures and V/Ill rat

Photoluminescence properties of cubic Ga

Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy

✍ J. Wu; H. Yaguchi; K. Onabe; R. Ito; Y. Shiraki 📂 Article 📅 1997 🏛 American Institute of Physics 🌐 English ⚖ 254 KB

Optical characterization of a GaAsSb/GaA

Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy

✍ Huang, C.T.; Wu, J.D.; Liu, C.F.; Huang, Y.S.; Wan, C.T.; Su, Y.K.; Tiong, K.K. 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 452 KB

Metalorganic vapor phase epitaxy growth

Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates

✍ Soohaeng Cho; A. Sanz-Hervás; Jongseok Kim; A. Majerfeld; C. Villar; B.W. Kim 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 117 KB

Comparison of blue and green InGaNâGaN

Comparison of blue and green InGaNâGaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy

✍ Qi, Y. D.; Liang, H.; Wang, D.; Lu, Z. D.; Tang, W.; Lau, K. M. 📂 Article 📅 2005 🏛 American Institute of Physics 🌐 English ⚖ 518 KB

Characteristics of GaAsNâGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates

Characteristics of GaAsNâGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates