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Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates

✍ Scribed by Soohaeng Cho; A. Sanz-Hervás; Jongseok Kim; A. Majerfeld; C. Villar; B.W. Kim


Book ID
108361683
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
117 KB
Volume
30
Category
Article
ISSN
0026-2692

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✍ E. Mayo; S.A. Dickey; A. Majerfeld; A. Sanz-Hervás; B.W. Kim 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 468 KB

Growth of GaAs and AIGaAs epitaxial layers on both (111)A and (111)B faces ofGaAs substrates was studied by the atmospheric metalorganic vapor phase epitaxy (MOVPE) technique. We show that GaAs and A1GaAs layers with excellent surface quality can be grown at relatively low temperatures and V/Ill rat