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Molecular beam epitaxial growth of GaAs/AlAs and GaAs/AlGaAs quantum wells on sub-micron-period corrugated substrates

✍ Scribed by F.S. Turco; S. Simhony; K. Kash; D.M. Hwang; T.S. Ravi; E. Kapon; M.C. Tamargo

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
772 KB
Volume
104
Category
Article
ISSN
0022-0248

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πŸ“œ SIMILAR VOLUMES

Photoluminescence and photoluminescence
Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy
✍ H. Nakashima; T. Takeuchi; K. Inoue; T. Fukunaga; D. Bimberg; J. Christen πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 66 KB

We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show