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Comparison of blue and green InGaN∕GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy

✍ Scribed by Qi, Y. D.; Liang, H.; Wang, D.; Lu, Z. D.; Tang, W.; Lau, K. M.

Book ID
120520632
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
518 KB
Volume
86
Category
Article
ISSN
0003-6951

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## Abstract The non‐polar m‐plane InGaN/GaN light‐emitting diodes (LEDs) grown by metal‐organic chemical vapor deposition (MOCVD) on LiAlO~2~(100) substrates were investigated. The structure of LEDs is composed by GaN p–n junction and five InGaN/GaN multiple quantum wells (MQWs). They emit blue or