𝔖 Bobbio Scriptorium

✦ LIBER ✦

Arsenic doping in Si-MBE using low energy ion implantation (LEII)

✍ Scribed by E.J.H. Collart; D.J. Gravesteijn; E.G.C. Lathouwers; W.J. Kersten

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 305 KB
Volume: 157
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)00355-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Steep doping profiles obtained by low-en

Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers

✍ N. Djebbar; J. Gutierrez; H. Charki; A. Vapaille; G. Prudon; J.C. Dupuy 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 389 KB

Reduction in the effective barrier heigh

Reduction in the effective barrier height in PtSi-p-Si Schottky diodes by using low energy ion implantation

✍ C.-Y. Wei; W. Tantraporn; W. Katz; G. Smith 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 273 KB

A computer-aided simulation model for th

A computer-aided simulation model for the I–V characteristic of M-n-p silicon Schottky-barrier diodes produced by use of low-energy arsenic-ion implantation

✍ Ching-Yuan Wu; Ming-Chein Chang; An-Jui Shey 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 758 KB

A computer-aided simulation model for th

A computer-aided simulation model for the I–V characteristic of M-n-p silicon Schottky-barrier diodes produced by use of low-energy arsenic-ion implantation: Ching-Yuan Wu, Ming-Chein Chang and An-Jui Shey. Solid-St. Electron.26 (9), 893 (1983)

📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 207 KB

The depth of disorder generation in low

The depth of disorder generation in low energy Ar+ ion implanted Si: S Kostic, W Begemann, I Abril, DG Armour and G Carter, Deparment of Electronic and Electrical Engineering, University of Salford, Salford M5 4WT, UK

📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 98 KB

Accelerated-ion beam doping during Si gr

Accelerated-ion beam doping during Si growth by molecular beam epitaxy and ion-enhanced In film deposition using a low-energy (40–300 eV) In ion source: M-A Hasan J Knall SA Barnett, Department of Physics, Linköping University, S-58183 Linköping, Sweden and J-E Sundgren, A Rockett and JE Greene, Department of Mettalurgy, the Coordinated Science Laboratory and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, USA

📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 149 KB