Accelerated-ion beam doping during Si growth by molecular beam epitaxy and ion-enhanced In film deposition using a low-energy (40–300 eV) In ion source: M-A Hasan J Knall SA Barnett, Department of Physics, Linköping University, S-58183 Linköping, Sweden and J-E Sundgren, A Rockett and JE Greene, Department of Mettalurgy, the Coordinated Science Laboratory and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, USA