𝔖 Bobbio Scriptorium

✦ LIBER ✦

The depth of disorder generation in low energy Ar+ ion implanted Si: S Kostic, W Begemann, I Abril, DG Armour and G Carter, Deparment of Electronic and Electrical Engineering, University of Salford, Salford M5 4WT, UK

Publisher: Elsevier Science
Year: 1986
Tongue: English
Weight: 98 KB
Volume: 36
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(86)90161-2

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📜 SIMILAR VOLUMES

RBS and SIMS measurements of the fluence

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Radiation damage in Si and GaAs due to l

Radiation damage in Si and GaAs due to low energy ion bombardment: A Al-Bayati, K Orrman-Rossiter, R Baht and D G Armour,Department of Electronic and Electrical Engineering, University of Salford, Salford M5 4WT, UK

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