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Application and Evaluation of the RF Charge-Pumping Technique

✍ Scribed by Sasse, G.T.; Schmitz, J.


Book ID
114619136
Publisher
IEEE
Year
2008
Tongue
English
Weight
228 KB
Volume
55
Category
Article
ISSN
0018-9383

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In this paper, we present our results on the distribution and generation of traps in a SiO 2 /Al 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of