In this paper, we present our results on the distribution and generation of traps in a SiO 2 /Al 2 O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of
โฆ LIBER โฆ
Use of the charge pumping technique with a sinusoidal gate waveform
โ Scribed by J.L. Autran; C. Chabrerie
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 181 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0038-1101
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