Use of the charge pumping technique to understand non-uniform n-channel MOSFET degradation
✍ Scribed by F. Djahli; J.L. Autran; C. Plossu; B. Balland
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 260 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
By using the charge pumping technique we have separated the interface state from the fixed charge effects when non-uniform MOSFET degradation is induced by hot-carrier injection under electrical stress. For n-channel MOSFETs we show that, after a hot-electron injection, hot-holes can also be injected into the gate oxide under the same stress conditions. In this article we also show, by the study of static characteristics before and after the electrical stress, that the transductance degradation AG, and the threshold voltage shift A Vr (induced by a maximum substrate current stress condition) follow an At" law, but with very different values of n.