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Evaluation of channel hot carrier effects in n-MOS transistors at 77 K with the charge pumping technique

✍ Scribed by P. Heremans; Y.-C. Sun; G. Groeseneken; H.E. Maes


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
306 KB
Volume
30
Category
Article
ISSN
0169-4332

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