๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping technique

โœ Scribed by P. Heremans; H. Maes; N. Saks


Book ID
126706581
Publisher
IEEE
Year
1986
Tongue
English
Weight
292 KB
Volume
7
Category
Article
ISSN
0741-3106

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Use of the charge pumping technique to u
โœ F. Djahli; J.L. Autran; C. Plossu; B. Balland ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 260 KB

By using the charge pumping technique we have separated the interface state from the fixed charge effects when non-uniform MOSFET degradation is induced by hot-carrier injection under electrical stress. For n-channel MOSFETs we show that, after a hot-electron injection, hot-holes can also be injecte