𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Analysis of ion-implanted GaAs by spectroscopic ellipsometry

✍ Scribed by M. Erman; J.B. Theeten

Publisher
Elsevier Science
Year
1983
Weight
60 KB
Volume
135
Category
Article
ISSN
0167-2584

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Characterization of oxygen-ion-implanted
Characterization of oxygen-ion-implanted silicon using spectroscopic ellipsometry and transmission electron microscopy
✍ S. Lynch; G.M. Creen; R. Greef; J. Margail; J.M. Lamure; J. Stoemenos πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 297 KB

Separation by implanted oxygen (SIMOX) substrates from several research production processes including low energy implantation, multiple implantation and low dose studies were characterized using spectroscopic ellipsometry, crosssectional transmission electron microscopy (XTEM) and planar view TEM.