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Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

✍ Scribed by Zhao, Hongping; Liu, Guangyu; Tansu, Nelson


Book ID
118161634
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
467 KB
Volume
97
Category
Article
ISSN
0003-6951

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## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req