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Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory

✍ Scribed by Seo, Y. J.; Kim, K. C.; Kim, T. G.; Sung, Y. M.; Cho, H. Y.; Joo, M. S.; Pyi, S. H.

Book ID: 121331135
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 634 KB
Volume: 92
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2830000

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