✦ LIBER ✦

Investigation of reoxidation mechanisms in nitrided tunnel oxides for Flash memory applications

✍ Scribed by N. Breil; L. Cassagnard; C. Arsac; R. Duru; G. Briend

Book ID: 104053011
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 429 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.03.115

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✦ Synopsis

Aggressive scaling of Flash memory devices requires robust tunnel oxides to improve the cell performance while preserving the retention and endurance characteristics. In this context, reoxidation of the tunnel oxide has recently [2] been proposed as a promising technique. In this paper, we focus our investigations on the mechanisms related to radical (O ⁄ ) or dry (O 2 ) reoxidation of nitrided tunnel oxides.

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