✦ LIBER ✦

[IEEE 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1994)] Proceedings of 1994 IEEE International Electron Devices Meeting - Read-disturb degradation mechanism due to electron trapping in the tunnel oxide for low-voltage flash memories

✍ Scribed by Kato, M.; Miyamoto, N.; Kume, H.; Satoh, A.; Adachi, T.; Ushiyama, M.; Kimura, K.

No coin nor oath required. For personal study only.

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