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Investigation of Tunneling Current in Gate Stacks for Flash Memory Applications

โœ Scribed by Chakrabarti, B.; Heesoo Kang; Brennan, B.; Tae Joo Park; Cantley, K.D.; Pirkle, A.; McDonnell, S.; Jiyoung Kim; Wallace, R.M.; Vogel, E.M.

Book ID
114620754
Publisher
IEEE
Year
2011
Tongue
English
Weight
831 KB
Volume
58
Category
Article
ISSN
0018-9383

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โœ N. Breil; L. Cassagnard; C. Arsac; R. Duru; G. Briend ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 429 KB

Aggressive scaling of Flash memory devices requires robust tunnel oxides to improve the cell performance while preserving the retention and endurance characteristics. In this context, reoxidation of the tunnel oxide has recently [2] been proposed as a promising technique. In this paper, we focus our