The effect of oxygen source on atomic layer deposited Al2O3 as blocking oxide in metal/aluminum oxide/nitride/oxide/silicon memory capacitors

✍ Scribed by Nikolaou, Nikolaos; Ioannou-Sougleridis, Vassilios; Dimitrakis, Panagiotis; Normand, Pascal; Skarlatos, Dimitrios; Giannakopoulos, Konstantinos; Kukli, Kaupo; Niinistö, Jaakko; Ritala, Mikko; Leskelä, Markku

• Book ID: 123335293
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 906 KB
• Volume: 533
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2012.10.137