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Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown

✍ Scribed by C. L. Cha; E. F. Chor; H. Gong; L. Chan


Book ID
110240537
Publisher
Springer
Year
2000
Tongue
English
Weight
507 KB
Volume
19
Category
Article
ISSN
0261-8028

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