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Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress

✍ Scribed by Yang, Zhen; Wang, Jinyan; Xu, Zhe; Li, Xiaoping; Zhang, Bo; Wang, Maojun; Yu, Min; Zhang, Jincheng; Ma, Xiaohua; Li, Yongbing

Book ID: 125438573
Publisher: IOP Publishing
Year: 2014
Tongue: English
Weight: 398 KB
Volume: 35
Category: Article
ISSN: 1674-4926
DOI: 10.1088/1674-4926/35/1/014007

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