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AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al 2 O 3 gate oxide

✍ Scribed by Gregušová, D; Stoklas, R; Čičo, K; Lalinský, T; Kordoš, P

Book ID: 120351380
Publisher: Institute of Physics
Year: 2007
Tongue: English
Weight: 455 KB
Volume: 22
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/22/8/021

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