𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Advances in high-k dielectric gate materials for future ULSI devices

✍ Scribed by Rajnish K. Sharma; Ashok Kumar; John M. Anthony

Book ID
107518467
Publisher
The Minerals, Metals & Materials Society
Year
2001
Tongue
English
Weight
497 KB
Volume
53
Category
Article
ISSN
1047-4838

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CHC degradation of strained devices base
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✍ E. Amat; R. Rodríguez; M.B. González; J. Martín-Martínez; M. Nafría; X. Aymerich 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 461 KB

A comparison between the Channel Hot-Carrier (CHC) degradation on strained pMOSFETs with SiGe source/ drain (S/D) based on different gate dielectric materials, as SiON or HfSiON, has been done. The influence of the device channel orientation, channel length and temperature on the CHC damage has been