Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices

A novel approach for determining the eff

A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices

✍ C.L Hinkle; C Fulton; R.J Nemanich; G Lucovsky 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 224 KB

There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth ox