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Gate-controlled transport in GaN nanowire devices with high- k Si3N4 gate dielectrics

✍ Scribed by Jae-Woong Lee; Moon-Ho Ham; Jae-Min Myoung

Book ID
118501209
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
524 KB
Volume
145
Category
Article
ISSN
0038-1098

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RF and DC characteristics in Al2O3/Si3N4
RF and DC characteristics in Al2O3/Si3N4insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure
✍ Maeda, Narihiko ;Makimura, Takashi ;Maruyama, Takashi ;Wang, Chengxin ;Hiroki, M πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 224 KB

## Abstract Al~2~O~3~/Si~3~N~4~ insulated‐gate AlGaN/GaN heterostructure field‐effect transistors (HFETs) have been fabricated, where the regrown ohmic structure was incorporated to reduce the contact resistance. Excellent DC and RF characteristics have been obtained together with the low gate leak