Excimer lasers for 0.1 μm lithography an
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K. Vogler; U. Stamm; R. Pätzel; I. Tassy; I. Bragin; R. Osmanov; S. Govorkov; J.
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Article
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2000
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Elsevier Science
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English
⚖ 289 KB
According to thc SIA roadmap, semiconductor chip geometries will reach feature sizes of 100 nm in the year 2002. In this process the exposure wavelength for the optical lithography is proposed to be 193 nm and ultimately 157 nm, as emitted by the ArF respectively the F2 excimer laser. During the pas