Excimer lasers for 0.1 μm lithography and beyond

✍ Scribed by K. Vogler; U. Stamm; R. Pätzel; I. Tassy; I. Bragin; R. Osmanov; S. Govorkov; J. Kleinschmidt; T Schroeder; F. Voß; D. Basting

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 289 KB
• Volume: 53
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(00)00284-7

✦ Synopsis

According to thc SIA roadmap, semiconductor chip geometries will reach feature sizes of 100 nm in the year 2002. In this process the exposure wavelength for the optical lithography is proposed to be 193 nm and ultimately 157 nm, as emitted by the ArF respectively the F2 excimer laser. During the past 20 years Lambda Physik has gained extensive applications experience with both the ArF and F2 lasers.

In this paper we report on the progress of the ArF and F2 laser light source. The performance characteristics such as durability, output power, repetition rate, bandwidth and the feasibility of the laser for microlithography are discussed in detail.