Accurate determination of doping profile from MOSFET d.c. measurement

✍ Scribed by S. Gupta

• Book ID: 104157611
• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 158 KB
• Volume: 19
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(88)80002-8

✦ Synopsis

A novel method of accurately determining the doping profile under the gate regioq of an enhancement mode MOSFET using d.c. measurements has been proposed-:. This method computes point-to-point impurity concentration in the gate region by utilising the h, -V=, data of the MOSFET operating in its linear region at varying substrate bias.