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A simple method for the determination of parameters of ion implanted doping profiles by means of threshold voltage measurements of MOSFET's

✍ Scribed by Landgraf-Dietz, D.

Publisher: John Wiley and Sons
Year: 1978
Tongue: English
Weight: 214 KB
Volume: 45
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210450252

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