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A study of reactive ion etching damage effects in GaN

✍ Scribed by B Rong; R.J Reeves; S.A Brown; M.M Alkaisi; E van der Drift; R Cheung; W.G Sloof

Book ID: 114155295
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 103 KB
Volume: 57-58
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(01)00489-0

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