๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy

โœ Scribed by T. Ishida; K. Maeda; S. Takeuchi

Publisher
Springer
Year
1980
Tongue
English
Weight
555 KB
Volume
21
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Study of deep levels in Schottky/CuInSe2
Study of deep levels in Schottky/CuInSe2single-crystal devices by deep-level transient spectroscopy measurements
โœ A. M. Bakry; A. M. Elnaggar ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Springer US ๐ŸŒ English โš– 152 KB

Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot