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A study of cracking in GaN grown on silicon by molecular beam epitaxy

✍ Scribed by R. Jothilingam; M. W. Koch; J. B. Posthill; G. W. Wicks

Book ID: 107452629
Publisher: Springer US
Year: 2001
Tongue: English
Weight: 698 KB
Volume: 30
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-001-0064-5

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