High rate deposition of a-Si:H and a-SiN
โ
T Takagi; K Takechi; Y Nakagawa; Y Watabe; S Nishida
๐
Article
๐
1998
๐
Elsevier Science
๐
English
โ 322 KB
Very High Frequency (VHF) plasma enhanced chemical vapour deposition (PECVD) has been applied to hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiN x :H) films for thin film transistors (TFTs) fabrication. The effect of the excitation frequency on the depositio