✦ LIBER ✦

Towards high deposition rates of a-Si:H: The limiting factors

✍ Scribed by P. Roca i Cabarrocas

Book ID: 115988939
Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 421 KB
Volume: 164-166
Category: Article
ISSN: 0022-3093
DOI: 10.1016/0022-3093(93)90486-h

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High efficiency a-Si:H alloy cell deposi

High efficiency a-Si:H alloy cell deposited at high deposition rate

✍ K. Saito; M. Sano; K. Ogawa; I. Kajita 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 192 KB

Defect density of a-Si:H films grown at

Defect density of a-Si:H films grown at high deposition rates

✍ B. Alhallani; G. Suchaneck; J. Schmal; R. Staub; B. Adolphi; K. Drescher 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 407 KB

High rate primary ion beam deposition of

High rate primary ion beam deposition of a-Si:H films

✍ H. Frey 📂 Article 📅 1988 🏛 Springer 🌐 English ⚖ 371 KB

Switching performance of high rate depos

Switching performance of high rate deposition processing a-Si:H TFTs

✍ Kaichi Fukuda; Nobuo Imai; Shin-ichi Kawamura; Kunio Matsumura; Nobuki Ibaraki 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 264 KB

High rate deposition of a-Si:H and a-SiN

High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD

✍ T Takagi; K Takechi; Y Nakagawa; Y Watabe; S Nishida 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 322 KB

Very High Frequency (VHF) plasma enhanced chemical vapour deposition (PECVD) has been applied to hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiN x :H) films for thin film transistors (TFTs) fabrication. The effect of the excitation frequency on the depositio

High-rate deposition of a-Si:H using ele

High-rate deposition of a-Si:H using electron cyclotron resonance plasma

✍ Seiichi Kato; Takeshi Aoki 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 186 KB