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Switching performance of high rate deposition processing a-Si:H TFTs

✍ Scribed by Kaichi Fukuda; Nobuo Imai; Shin-ichi Kawamura; Kunio Matsumura; Nobuki Ibaraki


Book ID
115991092
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
264 KB
Volume
198-200
Category
Article
ISSN
0022-3093

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High rate deposition of a-Si:H and a-SiN
✍ T Takagi; K Takechi; Y Nakagawa; Y Watabe; S Nishida πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 322 KB

Very High Frequency (VHF) plasma enhanced chemical vapour deposition (PECVD) has been applied to hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiN x :H) films for thin film transistors (TFTs) fabrication. The effect of the excitation frequency on the depositio