A physics-based model of DC and microwav
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Jonathan C. Sippel; Syed S. Islam; Sankha S. Mukherjee
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Article
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2007
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John Wiley and Sons
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English
⚖ 391 KB
A physics-based model of AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed for the analysis of DC and microwave characteristics. Large-and small-signal parameters are calculated for a given device dimensions and operating conditions. Spontaneous and piezoelectric polarizations at the h