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A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices

✍ Scribed by Khandelwal, Sourabh; Fjeldly, T.A.


Book ID
119373477
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
947 KB
Volume
76
Category
Article
ISSN
0038-1101

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