A physics-based model of DC and microwave characteristics of GaN/AlGaN HEMTs

✍ Scribed by Jonathan C. Sippel; Syed S. Islam; Sankha S. Mukherjee

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 391 KB
• Volume: 17
• Category: Article
• ISSN: 1096-4290
• DOI: 10.1002/mmce.20219

✦ Synopsis

A physics-based model of AlGaN/GaN High Electron Mobility Transistor (HEMT) is developed for the analysis of DC and microwave characteristics. Large-and small-signal parameters are calculated for a given device dimensions and operating conditions. Spontaneous and piezoelectric polarizations at the heterointerface and finite effective width of the 2DEG gas have been incorporated in the analysis. The model predicts a maximum drain current of 523 mA/mm and transconductance of 138 mS/mm for a 1 mm 3 75 lm device, which are in agreement with the experimental data. V