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Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix

✍ Scribed by V. S. Sizov; A. A. Gutkin; A. V. Sakharov; V. V. Lundin; P. N. Brunkov; A. F. Tsatsul’nikov


Book ID
111444360
Publisher
Springer
Year
2009
Tongue
English
Weight
212 KB
Volume
43
Category
Article
ISSN
1063-7826

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