𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A physically based compact gate C-V model for ultrathin (EOT ∼1 nm and below) gate dielectric MOS devices

✍ Scribed by Fei Li; Mudanai, S.; Register, L.F.; Banerjee, S.K.


Book ID
114617802
Publisher
IEEE
Year
2005
Tongue
English
Weight
592 KB
Volume
52
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES