On the Physically Based Compact Gate C –V Model for Ultrathin Gate Dielectric MOS Devices Using the Modified Airy Function Approximation

✍ Scribed by Shams, I.B.; Habib, K.M.M.; Khosru, Q.D.M.; Zainuddin, A.N.M.; Haque, A.

• Book ID: 114618888
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 186 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.902987