✦ LIBER ✦
Physically based quantum-mechanical compact model of MOS devices substrate-injected tunneling current through ultrathin (EOT ∼ 1 nm) SiO2 and high-κ gate stacks
✍ Scribed by Fei Li; Mudanai, S.P.; Yang-Yu Fan; Register, L.F.; Banerjee, S.K.
- Book ID
- 114618225
- Publisher
- IEEE
- Year
- 2006
- Tongue
- English
- Weight
- 429 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0018-9383
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