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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - A physics based compact model for drain current in AlGaN/GaN HEMT devices

✍ Scribed by Khandelwal, Sourabh; Fjeldly, Tor A.

No coin nor oath required. For personal study only.

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