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A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFETs

โœ Scribed by Lee, R.G.-H.; Jen-Shien Su; Chung, S.S.


Book ID
114536350
Publisher
IEEE
Year
1996
Tongue
English
Weight
864 KB
Volume
43
Category
Article
ISSN
0018-9383

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