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An efficient method for characterizing time-evolutional interface state and its correlation with the device degradation in LDD n-MOSFETs

✍ Scribed by Giahn-Horng Lee, R.; Jiunn-Pey Wu; Chung, S.S.


Book ID
114536473
Publisher
IEEE
Year
1996
Tongue
English
Weight
664 KB
Volume
43
Category
Article
ISSN
0018-9383

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