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A new metal-organic chemical vapor deposition process for selective copper metallization

✍ Scribed by J.A.T. Norman; B.A. Muratore; P.N. Dyer; D.A. Roberts; A.K. Hochberg; L.H. Dubois

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 528 KB
Volume: 17
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(93)90085-2

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## Abstract Lanthanum nickelate layers have been deposited onto 100 mm diameter silicon/silicon dioxide and (0001) sapphire substrates by liquid‐delivery metal–organic (MO) CVD using the precursors La(thd)~3~ and Ni(thd)~2~ (thd = 2,2,6,6‐tetramethyl‐3,5‐heptanedionato) dissolved in tetrahydrofuran