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Metal-organic chemical vapor deposition of indium selenide films using a single-source precursor

✍ Scribed by Mohammad Afzaal; David Crouch; Paul O’Brien

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
214 KB
Volume
116
Category
Article
ISSN
0921-5107

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📜 SIMILAR VOLUMES

ChemInform Abstract: Metalorganic Chemic
ChemInform Abstract: Metalorganic Chemical Vapor Deposition of Indium Selenide Thin Films.
✍ S. L. STOLL; A. R. BARRON 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 33 KB 👁 2 views

InSe films are grown at 230-420 • C by low-pressure MOCVD from [(tBu) 2 In(µ-SetBu)] 2 and [(Me 2 EtC)In(µ 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures ¡ 330 • C ball