Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications
✍ Scribed by M.H. Tsai; S.C. Sun; C.P. Lee; H.T. Chiu; C.E. Tsai; S.H. Chuang; S.C. Wu
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 762 KB
- Volume
- 270
- Category
- Article
- ISSN
- 0040-6090
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Electroluminescence (EL) measurements of nitride-rich GaN 1--x P x single quantum well (SQW) structures, grown using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD), were performed. The maximum red shift of GaN 1--x P x to the GaN was 50 meV from the result of photoluminescence (PL)
## Abstract Lanthanum nickelate layers have been deposited onto 100 mm diameter silicon/silicon dioxide and (0001) sapphire substrates by liquid‐delivery metal–organic (MO) CVD using the precursors La(thd)~3~ and Ni(thd)~2~ (thd = 2,2,6,6‐tetramethyl‐3,5‐heptanedionato) dissolved in tetrahydrofuran