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A New Field-Effect Transistor with Selectively Doped GaAs/n-Al x Ga 1- x As Heterojunctions

✍ Scribed by Mimura, Takashi; Hiyamizu, Satoshi; Fujii, Toshio; Nanbu, Kazuo

Book ID: 126861779
Publisher: Institute of Pure and Applied Physics
Year: 1980
Tongue: English
Weight: 373 KB
Volume: 19
Category: Article
ISSN: 0021-4922
DOI: 10.1143/jjap.19.l225

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